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insulated gate bipolar transistor with ultra-low vf diodefor induction heating and soft switching applications e g n-channel c v ces = 1200v i c = 30a, t c = 100c v ce(on) typ. = 1.69v features low v ce (on) trench igbt technology low switching losses square rbsoa 100% of the parts tested for 4x rated current (i lm ) positive v ce (on) temperature co-efficient ultra-low v f diode tight parameter distribution lead free package benefits device optimized for induction heating and soft switching applications high efficiency due to low v ce(on) , low switching losses and ultra-low v f rugged transient performance for increased reliability excellent current sharing in parallel operation low emi g c e gate collector emitter to-247ac irg7ph42ud2pbf to-247ad IRG7PH42UD2-EP absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current 60 i c @ t c = 100c continuous collector current 30 i cm pulse collector current, v ge =15v 90 i lm clamped inductive load current, v ge =20v 120 i f @ t c = 100c diode continous forward current 10 i fsm diode non repetitive peak surge current @ t j = 25c 170 i fm diode peak repetitive forward current 90 v ge continuous gate-to-emitter voltage 30 v p d @ t c = 25c maximum power dissipation 321 p d @ t c = 100c maximum power dissipation 128 t j operating junction and -55 to +150 t stg storage temperature range soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r jc (igbt) thermal resistance junction-to-case-(each igbt) CCC CCC 0.39 r jc (diode) thermal resistance junction-to-case-(each diode) CCC CCC 0.82 r cs thermal resistance, case-to-sink (flat, greased surface) CCC 0.24 CCC r ja thermal resistance, junction-to-ambient (typical socket mount) CCC 40 CCC a w c c/w e g c c e g c c

! irg7ph42ud2pbfIRG7PH42UD2-EP form quantity irg7ph42ud2pbf to-247ac tube 25 irg7ph42ud2pbf IRG7PH42UD2-EP to-247ad tube 25 IRG7PH42UD2-EP standard pack base part number package type orderable part number downloaded from: http:///

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notes: v cc = 80% (v ces ), v ge = 20v, l = 200 h, r g = 10 . pulse width limited by max. junction temperature. refer to an-1086 for guidelines for measuring v (br)ces safely. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig v (br)ces collector-to-emitter breakdown voltage 1200 v v ge = 0v, i c = 100 a ct4 v (br)transient repetitive transient collector-to-emitter voltage 1300 v v ge = 0v, t j =75c, pw 10 s ? v (br)ces / ? t j temperature coeff. of breakdown voltage 1.18 v/c v ge = 0v, i c = 1ma (25c-150c) ct4 1 . 6 92 . 0 2 i c = 30a, v ge = 15v, t j = 25c 4,5,6 2 . 0 7 i c = 30a, v ge = 15v, t j = 150c 8,9,10 v ge(th) gate threshold voltage 3.0 6.0 v v ce = v ge , i c = 1.0ma 8,9 ? v ge(th) / ? tj threshold voltage temp. coefficient -15 mv/c v ce = v ge , i c = 1.0ma (25c - 150c) 10,11 gfe forward transconductance 32 s v ce = 50v, i c = 30a, pw = 60 s 1 . 01 5 0 v ge = 0v, v ce = 1200v 450 1000 v ge = 0v, v ce = 1200v, t j = 150c 1 . 0 81 . 2 4 i f = 10a 7 1 . 01 . 1 5 i f = 10a, t j = 150c i ges gate-to-emitter leakage current 100 na v ge = 30v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units ref.fig q g total gate charge (turn-on) 156 234 i c = 30a 17 q ge gate-to-emitter charge (turn-on) 21 32 nc v ge = 15v ct1 q gc gate-to-collector charge (turn-on) 69 104 v cc = 600v i c = 30a, v cc = 600v, v ge = 15v e off turn-off switching loss 1320 1460 r g = 10 , l = 200 h,t j = 25c energy losses include tail t d(off) turn-off delay time 233 292 i c = 30a, v cc = 600v, v ge = 15v t f fall time 64 85 r g = 10 , l = 200 h,t j = 25c i c = 30a, v cc = 600v, v ge = 15v e off turn-off switching loss 2080 j r g = 10 , l = 200 h,t j = 150c ct3 energy losses include tail t d(off) turn-off delay time 297 ns i c = 30a, v cc = 600v, v ge = 15v wf1 t f fall time 173 r g =10 , l=200 h, t j = 150c c ies input capacitance 3338 v ge = 0v 16 c oes output capacitance 124 pf v cc = 30v c res reverse transfer capacitance 75 f = 1.0mhz t j = 150c, i c = 120a 3 rbsoa reverse bias safe operating area full square v cc = 960v, vp =1200v ct2 rg = 10 , v ge = +15v to 0v v j ns v ce(on) collector-to-emitter saturation voltage i ces collector-to-emitter leakage current v fm diode forward voltage drop ct3 conditions a v downloaded from: http:///
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fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - reverse bias soa t j = 150c; v ge =15v fig. 4 - typ. igbt output characteristics t j = -40c; tp = 80 s fig. 5 - typ. igbt output characteristics t j = 25c; tp = 80 s fig. 6 - typ. igbt output characteristics t j = 150c; tp = 80 s 0 25 50 75 100 125 150 t c (c) 0 10 20 30 40 50 60 70 i c ( a ) 10 100 1000 10000 v ce (v) 1 10 100 1000 i c ( a ) 024681 0 v ce (v) 0 20 40 60 80 100 120 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 024681 0 v ce (v) 0 20 40 60 80 100 120 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 024681 0 v ce (v) 0 20 40 60 80 100 120 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0 20 40 60 80 100 120 140 160 t c (c) 0 50 100 150 200 250 300 350 p t o t ( w ) downloaded from: http:///

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fig. 7 - typ. diode forward voltage drop characteristics fig. 8 - typical v ce vs. v ge t j = -40c fig. 9 - typical v ce vs. v ge t j = 25c fig. 10 - typical v ce vs. v ge t j = 150c fig. 11 - typ. transfer characteristics v ce = 50v; tp = 10 s fig. 12 - typ. energy loss vs. i c t j = 150c; l = 200 h; v ce = 600v, r g = 10 ; v ge = 15v 5 1 01 52 0 v ge (v) 0 2 4 6 8 10 12 14 v c e ( v ) i ce = 15a i ce = 30a i ce = 60a 51 01 52 0 v ge (v) 0 2 4 6 8 10 12 14 v c e ( v ) i ce = 15a i ce = 30a i ce = 60a 51 01 52 0 v ge (v) 0 2 4 6 8 10 12 14 v c e ( v ) i ce = 15a i ce = 30a i ce = 60a 0 2 55 07 5 i c (a) 1000 1500 2000 2500 3000 3500 4000 4500 e n e r g y ( j ) e off 4 6 8 10 12 v ge , gate-to-emitter voltage (v) 0 20 40 60 80 100 120 i c e , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 25c t j = 150c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v f (v) 0.1 1 10 100 1000 i f ( a ) 25c 150c downloaded from: http:///
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fig. 17 - typical gate charge vs. v ge i ce = 30a; l = 600 h fig. 13 - typ. switching time vs. i c t j = 150c; l = 200 h; v ce = 600v, r g = 10 ; v ge = 15v fig. 14 - typ. energy loss vs. r g t j = 150c; l = 200 h; v ce = 600v, i ce = 30a; v ge = 15v fig. 15 - typ. switching time vs. r g t j = 150c; l = 200 h; v ce = 600v, i ce = 30a; v ge = 15v fig. 16 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 25 50 75 100 125 rg ( ) 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 e n e r g y ( j ) e off 0 100 200 300 400 500 600 v ce (v) 1 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 25 50 75 100 125 150 175 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 600v v ces = 400v 0 10 20 30 40 50 60 70 i c (a) 100 1000 s w i c h i n g t i m e ( n s ) td off t f 0 20 40 60 80 100 120 r g ( ) 10 100 1000 10000 s w i c h i n g t i m e ( n s ) td off t f downloaded from: http:///
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fig 18. maximum transient thermal impedance, junction-to-case (igbt) fig. 19. maximum transient thermal impedance, junction-to-case (diode) 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.1306 0.0003130.1752 0.002056 0.0814 0.008349 0.0031 0.0431 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0..344 0.001120.328 0.003118 0.147 0.015806 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri downloaded from: http:///
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1k vc c dut 0 l l rg 80 v dut 480v fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - switching loss circuit fig.c.t.4 - bvces filter circuit l rg vcc diode clamp / dut dut / driver - 5v fig. wf1 - typ. turn-off loss waveform @ t j = 150c using fig. ct.3 -100 0 100 200 300 400 500 600 700 800 900 1000 -1 0 1 2 time( s) v ce (v) -5 0 5 10 15 20 25 30 35 40 45 50 i ce (a) 90% i ce 5%v ce 10% i ce eof f lo s s tf downloaded from: http:///
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ye ar 1 = 2001 dat e code part number internat ional logo rectifier as s e mb l y 56 57 irfpe30 135h line h i ndi cates "l ead- f r ee" we e k 35 lot code in the assembly line "h" as s e mb l e d on ww 35, 2001 note: "p" in assembly line position example: wi t h as s e mb l y this is an irfpe30 lot code 5657 to-247ac package is not recommended for surface mount application.
http://www.irf.com/package/ downloaded from: http:///
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assembly year 0 = 2000 as s embled on ww 35, 2000 in the assembly line "h" example: t his is an irgp30b 120kd-e lot code 5657 with assembly part number dat e code int ernational rect ifier logo 035h 56 57 week 35 line h lot code note: "p" in as s embly line pos ition i ndi cates "l ead- f r ee"

to-247ad package is not recommended for surface mount application.
http://www.irf.com/package/ downloaded from: http:///

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moisture sensitivity level to-247ac n/a to-247ad n/a rohs compliant qualification information ? qualification level industrial ? (per jedec jesd47f) ?? yes ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release date comments ? datasheet updated based on ir corporate template. ? removed approved (not released) from top header on page 1. revision history 8/20/2014 downloaded from: http:///

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